Band Gaps
Material
Symbol
Band gap (eV)
nm
Diamond
C
5.5
230
Silicon
Si
1.11
1120
Germanium
Ge
0.67
1900
Selenium
Se
1.74
713
Silicon carbide
SiC
2.86
434
Aluminium nitride
AlN
6.3
200
Aluminium phosphide
AlP
2.45
507
Aluminium arsenide
AlAs
2.16
575
Aluminium antimonide
AlSb
1.6
780
Gallium(III) nitride
GaN
3.4
360
Gallium(III) phosphide
GaP
2.26
549
Gallium(III) arsenide
GaAs
1.43
868
Gallium(II) sulfide
GaS
2.5
500
Gallium(II) antimonide
GaSb
0.7
1800
Indium(III) nitride
InN
0.7
1800
Indium(III) phosphide
InP
1.35
919
Indium(III) arsenide
InAs
0.36
3500
Zinc oxide
ZnO
3.37
368
Zinc sulfide
ZnS
3.6
340
Zinc selenide
ZnSe
2.7
460
Zinc telluride
ZnTe
2.25
552
Cadmium sulfide
CdS
2.42
513
Cadmium selenide
CdSe
1.73
717
Cadmium telluride
CdTe
1.49
833
Lead(II) sulfide
PbS
0.37
3400
Lead(II) selenide
PbSe
0.27
4600
Lead(II) telluride
PbTe
0.29
4300
Copper(II) oxide
CuO
1.2
1000
Energy of the electronic band edges in water.
ACS Nano (2010) 10.1021/nn9015423